Influence of ion energy on damage induced in silicon carbide single crystals probed by positron lifetime and Doppler-Broadening spectroscopies - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Poster Year : 2010

Influence of ion energy on damage induced in silicon carbide single crystals probed by positron lifetime and Doppler-Broadening spectroscopies

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Materials Science [cond-mat.mtrl-sci]

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https://in2p3.hal.science/in2p3-00771739

Submitted on : Wednesday, January 9, 2013-12:16:54 PM

Last modification on : Thursday, April 11, 2024-1:18:12 PM

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in2p3-00771739 , version 1 (09-01-2013)

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  • HAL Id : in2p3-00771739 , version 1

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F. Linez, A. Gentils, W. Egger, P. Desgardin, M.-F. Barthe. Influence of ion energy on damage induced in silicon carbide single crystals probed by positron lifetime and Doppler-Broadening spectroscopies. SLOPOS-12 International Workshop on Slow Positron Beam Techniques, Aug 2010, Magnetic Island, Australia. ⟨in2p3-00771739⟩

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