Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Thin Solid Films Year : 2010

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

J. Dupuis
  • Function : Author
INL - Photovoltaïque
E. Fourmond
INL - Photovoltaïque
CV
D. Ballutaud
  • Function : Author
Groupe d'Etude de la Matière Condensée
N. Bererd
  • Function : Author
ACE
M. Lemiti
INL - Photovoltaïque

Abstract

1 Corresponding author.

Domains

Radiochemistry
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https://in2p3.hal.science/in2p3-00734027

Submitted on : Thursday, January 10, 2019-9:42:42 AM

Last modification on : Thursday, April 11, 2024-1:18:12 PM

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in2p3-00734027 , version 1 (10-01-2019)

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J. Dupuis, E. Fourmond, D. Ballutaud, N. Bererd, M. Lemiti. Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition. Thin Solid Films, 2010, 519, pp.1325-1333. ⟨10.1016/j.tsf.2010.09.036⟩. ⟨in2p3-00734027⟩

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