Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures - IN2P3 - Institut national de physique nucléaire et de physique des particules
Article Dans Une Revue Journal of Low Temperature Physics Année : 2012

Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures

J. Domange
  • Fonction : Auteur
E. Olivieri
  • Fonction : Auteur
A. Broniatowski
  • Fonction : Auteur

Résumé

The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures are determined as a function of the electric field in the aOE (c) 001 > orientation, based on time-of-flight measurements in cryogenic coplanar grid Ge detectors. Results obtained in two n-type crystals (|N (a) -N (d) |< 10(10) cm(-3) and doped to 10(11) cm(-3)) are compared with the experimental data from previous investigations, and shown to be consistent with Monte-Carlo simulations of carrier transport.

Dates et versions

in2p3-00703201 , version 1 (01-06-2012)

Identifiants

Citer

J. Domange, E. Olivieri, A. Broniatowski. Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures. Journal of Low Temperature Physics, 2012, 167, pp.1149-1153. ⟨10.1007/s10909-012-0535-5⟩. ⟨in2p3-00703201⟩
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