Journal Articles
Radiation Effects and Defects in Solids
Year : 1989
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https://in2p3.hal.science/in2p3-00019456
Submitted on : Wednesday, May 30, 2001-2:34:26 PM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00019456 , version 1
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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, 1989, 110, pp.203-205. ⟨in2p3-00019456⟩
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