Inhomogeneous defect activation by rapid thermal processes in silicon

V. Thong-Quat; W. Eichhammer; P. Siffert

Journal Articles Applied Physics Letters Year : 1989

Inhomogeneous defect activation by rapid thermal processes in silicon

(1) , , (1)

1

V. Thong-Quat

Function : Author

Institut de Recherches Subatomiques

W. Eichhammer

Function : Author

P. Siffert

Function : Author

Institut de Recherches Subatomiques

Domains

Instrumentation and Detectors [physics.ins-det]

Yvette Heyd : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00019454

Submitted on : Wednesday, May 30, 2001-1:55:39 PM

Last modification on : Wednesday, April 24, 2024-11:28:54 AM

Dates and versions

in2p3-00019454 , version 1 (30-05-2001)

Identifiers

HAL Id : in2p3-00019454 , version 1

Cite

V. Thong-Quat, W. Eichhammer, P. Siffert. Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 1989, 54, pp.1235-1237. ⟨in2p3-00019454⟩

Inhomogeneous defect activation by rapid thermal processes in silicon

Domains

Dates and versions

Identifiers

Cite

Export

Collections

Share