Journal Articles
Applied Physics Letters
Year : 1989
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https://in2p3.hal.science/in2p3-00019454
Submitted on : Wednesday, May 30, 2001-1:55:39 PM
Last modification on : Wednesday, April 24, 2024-11:28:54 AM
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- HAL Id : in2p3-00019454 , version 1
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V. Thong-Quat, W. Eichhammer, P. Siffert. Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 1989, 54, pp.1235-1237. ⟨in2p3-00019454⟩
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