Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralsi silicon crystals - IN2P3 - Institut national de physique nucléaire et de physique des particules
Conference Papers Journal of Alloys and Compounds Year : 1992

Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralsi silicon crystals

A. Barhdadi
  • Function : Author
H. Amzil
  • Function : Author
N. M'Gafad
  • Function : Author
T. Biaz
  • Function : Author
W. Eichhammer
  • Function : Author
J.C. Muller
  • Function : Author
Institut de Recherches Subatomiques
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

Yvette Heyd  : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00019442

Submitted on : Wednesday, May 30, 2001-10:03:43 AM

Last modification on : Tuesday, April 30, 2024-11:42:16 AM

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in2p3-00019442 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019442 , version 1

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A. Barhdadi, H. Amzil, N. M'Gafad, T. Biaz, W. Eichhammer, et al.. Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralsi silicon crystals. Moroccan Solid State Chemistry Meeting, Oct 1991, Casablanca, Morocco. pp.221-224. ⟨in2p3-00019442⟩

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