Some problems arising in hydrogen passivation of silicon by ion bombardment techniques - IN2P3 - Institut national de physique nucléaire et de physique des particules
Communication Dans Un Congrès Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Année : 1985

Some problems arising in hydrogen passivation of silicon by ion bombardment techniques

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in2p3-00019431 , version 1 (29-05-2001)

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  • HAL Id : in2p3-00019431 , version 1

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J.C. Muller, Y. Ababou, A. Barhdadi, A. Mesli, M. Toulemonde, et al.. Some problems arising in hydrogen passivation of silicon by ion bombardment techniques. Ion Beam Modification Of Materials Conference,Ibmm '84, Jul 1984, Ithaca, United States. pp.304-309. ⟨in2p3-00019431⟩
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