Optical characteristics of thin silicon films deposited by CVD and annealed by pulsed laser - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Radiation Effects Year : 1982

Optical characteristics of thin silicon films deposited by CVD and annealed by pulsed laser

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in2p3-00017865 , version 1 (18-10-2000)

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  • HAL Id : in2p3-00017865 , version 1

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M.O. Lampert, J.C. Muller, J.P. Ponpon, P. Siffert. Optical characteristics of thin silicon films deposited by CVD and annealed by pulsed laser. Radiation Effects, 1982, 63, pp.169. ⟨in2p3-00017865⟩
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