Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Applied physics. A, Materials science & processing Year : 1987

Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si

J.P. Ponpon
  • Function : Author
Institut de Recherches Subatomiques
A. Saulnier
  • Function : Author
R. Stuck
  • Function : Author
Institut de Recherches Subatomiques

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https://in2p3.hal.science/in2p3-00017603

Submitted on : Thursday, September 28, 2000-10:21:04 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00017603 , version 1 (28-09-2000)

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J.P. Ponpon, A. Saulnier, R. Stuck. Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si. Applied physics. A, Materials science & processing, 1987, 44, pp.227. ⟨in2p3-00017603⟩

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