Oxygen behaviour during titanium silicide formation by rapid thermal annealing - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Journal of Applied Physics Year : 1987

Oxygen behaviour during titanium silicide formation by rapid thermal annealing

R. Pantel
  • Function : Author
D. Levy
  • Function : Author
D. Nicolas
  • Function : Author
J.P. Ponpon
  • Function : Author
Institut de Recherches Subatomiques

Yvette Heyd  : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00017601

Submitted on : Thursday, September 28, 2000-10:07:45 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

No file

Dates and versions

in2p3-00017601 , version 1 (28-09-2000)

Identifiers

  • HAL Id : in2p3-00017601 , version 1

Cite

R. Pantel, D. Levy, D. Nicolas, J.P. Ponpon. Oxygen behaviour during titanium silicide formation by rapid thermal annealing. Journal of Applied Physics, 1987, 62, pp.4319. ⟨in2p3-00017601⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

IN2P3 CNRS CGE SITE-ALSACE
11 View
0 Download

Share

More