Journal Articles
Journal of Applied Physics
Year : 1987
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https://in2p3.hal.science/in2p3-00017601
Submitted on : Thursday, September 28, 2000-10:07:45 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00017601 , version 1
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R. Pantel, D. Levy, D. Nicolas, J.P. Ponpon. Oxygen behaviour during titanium silicide formation by rapid thermal annealing. Journal of Applied Physics, 1987, 62, pp.4319. ⟨in2p3-00017601⟩
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