Electrical Characteristics of Laser Annealed Silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Applied physics. A, Materials science & processing Year : 1987

Electrical Characteristics of Laser Annealed Silicon

J. Martinez
  • Function : Author
E. Fogarassy
  • Function : Author
Institut de Recherches Subatomiques
A. Mesli
  • Function : Author
Institut de Recherches Subatomiques
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

Yvette Heyd  : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00017599

Submitted on : Thursday, September 28, 2000-10:01:58 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00017599 , version 1 (28-09-2000)

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  • HAL Id : in2p3-00017599 , version 1

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J. Martinez, E. Fogarassy, A. Mesli, P. Siffert. Electrical Characteristics of Laser Annealed Silicon. Applied physics. A, Materials science & processing, 1987, 42, pp.273. ⟨in2p3-00017599⟩

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