16 MeV-electron-induced defects in iron-doped indium phosphide - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Journal of Applied Physics Year : 1998

16 MeV-electron-induced defects in iron-doped indium phosphide

M. Kamta
  • Function : Author
C. Schwab
  • Function : Author
S. Domngang
  • Function : Author
J.P. Engel
  • Function : Author
Institut de Recherches Subatomiques

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https://in2p3.hal.science/in2p3-00016662

Submitted on : Thursday, August 31, 2000-10:17:51 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00016662 , version 1 (31-08-2000)

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  • HAL Id : in2p3-00016662 , version 1

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M. Kamta, C. Schwab, S. Domngang, J.P. Engel. 16 MeV-electron-induced defects in iron-doped indium phosphide. Journal of Applied Physics, 1998, 84, pp.4273-4280. ⟨in2p3-00016662⟩

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