Journal Articles
Journal of Applied Physics
Year : 1998
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https://in2p3.hal.science/in2p3-00016662
Submitted on : Thursday, August 31, 2000-10:17:51 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00016662 , version 1
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M. Kamta, C. Schwab, S. Domngang, J.P. Engel. 16 MeV-electron-induced defects in iron-doped indium phosphide. Journal of Applied Physics, 1998, 84, pp.4273-4280. ⟨in2p3-00016662⟩
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