Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Applied physics. A, Materials science & processing Year : 1989

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

T. Zundel
  • Function : Author
A. Mesli
  • Function : Author
J.C. Muller
  • Function : Author
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Dates and versions

in2p3-00016180 , version 1 (03-07-2000)

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  • HAL Id : in2p3-00016180 , version 1

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T. Zundel, A. Mesli, J.C. Muller, P. Siffert. Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation. Applied physics. A, Materials science & processing, 1989, 48, pp.31. ⟨in2p3-00016180⟩
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