Journal Articles
Applied physics. A, Materials science & processing
Year : 1989
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https://in2p3.hal.science/in2p3-00016180
Submitted on : Monday, July 3, 2000-8:41:19 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00016180 , version 1
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T. Zundel, A. Mesli, J.C. Muller, P. Siffert. Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation. Applied physics. A, Materials science & processing, 1989, 48, pp.31. ⟨in2p3-00016180⟩
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