Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power - IN2P3 - Institut national de physique nucléaire et de physique des particules
Conference Papers Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1992

Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power

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https://in2p3.hal.science/in2p3-00015889

Submitted on : Tuesday, May 30, 2000-3:12:51 PM

Last modification on : Monday, September 23, 2024-9:22:24 AM

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in2p3-00015889 , version 1 (30-05-2000)

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  • HAL Id : in2p3-00015889 , version 1

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A. Grob, J.J. Grob, P. Siffert. Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power. Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation, May 1991, Strasbourg, France. pp.309-313. ⟨in2p3-00015889⟩

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