Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

L. Blanquart; P. Delpierre; M.C. Habrard; A. Mekkaoui; T. Mouthuy; M. Dentan; E. Delagnes; N. Fourches; M. Rouger; R. Truche; E. Delevoye; J. de Pontcharra; J.P. Blanc; O. Flament; J. Leray; O. Musseau

Journal Articles IEEE Transactions on Nuclear Science Year : 1994

Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

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L. Blanquart

Function : Author

Centre de Physique des Particules de Marseille

P. Delpierre

Function : Author

Centre de Physique des Particules de Marseille

M.C. Habrard

Function : Author

Centre de Physique des Particules de Marseille

A. Mekkaoui

Function : Author

Centre de Physique des Particules de Marseille

T. Mouthuy

Function : Author

Centre de Physique des Particules de Marseille

M. Dentan

Function : Author

E. Delagnes

Function : Author
PersonId : 841247
ORCID : 0000-0002-8984-8299
IdRef : 176235108

N. Fourches

Function : Author

M. Rouger

Function : Author

R. Truche

Function : Author

E. Delevoye

Function : Author

J. de Pontcharra

Function : Author

J.P. Blanc

Function : Author

O. Flament

Function : Author

J. Leray

Function : Author

O. Musseau

Function : Author

Domains

Instrumentation and Detectors [physics.ins-det]

Magali Damoiseaux : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00013842

Submitted on : Friday, July 18, 2003-10:56:28 AM

Last modification on : Monday, June 10, 2024-1:04:28 PM

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in2p3-00013842 , version 1 (18-07-2003)

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HAL Id : in2p3-00013842 , version 1

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L. Blanquart, P. Delpierre, M.C. Habrard, A. Mekkaoui, T. Mouthuy, et al.. Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology. IEEE Transactions on Nuclear Science, 1994, 41, pp.2525-2529. ⟨in2p3-00013842⟩

Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

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