Amorphization of Pd-Si at 300K - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Radiation Effects Year : 1984

Amorphization of Pd-Si at 300K

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Chemical Physics [physics.chem-ph]

Jocelyne Lorgeril  : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00013232

Submitted on : Monday, May 17, 1999-3:21:27 PM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00013232 , version 1 (17-05-1999)

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  • HAL Id : in2p3-00013232 , version 1

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Jun Fan Xiang, A. Traverse, A. Thome, A. Benyagoub, J. Chaumont, et al.. Amorphization of Pd-Si at 300K. Radiation Effects, 1984, 81, pp.101-105. ⟨in2p3-00013232⟩

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