Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron X-ray irradiation - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Applied Physics Letters Year : 1999

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron X-ray irradiation

Yu. Kin-Man
  • Function : Author
W. Walukiewicz
  • Function : Author
S. Muto
  • Function : Author
H.C. Jin
  • Function : Author
J.R. Abelson
  • Function : Author
C. Clerc
  • Function : Author
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
C.J. Glover
  • Function : Author
M.C. Ridgway
  • Function : Author

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Instrumentation and Detectors [physics.ins-det]

Jocelyne Lorgeril  : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00003777

Submitted on : Wednesday, January 12, 2000-3:40:49 PM

Last modification on : Wednesday, April 24, 2024-11:28:54 AM

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in2p3-00003777 , version 1 (12-01-2000)

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  • HAL Id : in2p3-00003777 , version 1

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Yu. Kin-Man, W. Walukiewicz, S. Muto, H.C. Jin, J.R. Abelson, et al.. Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron X-ray irradiation. Applied Physics Letters, 1999, 75, pp.3282-3284. ⟨in2p3-00003777⟩

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