Journal Articles Philosophical Magazine Year : 2014

The feasibility of Al-based oxide precipitation in Fe-10%Cr alloy by ion implantation

C. Zheng
  • Function : Author
A. Gentils
J. Ribis
  • Function : Author
  • PersonId : 1059161
  • IdHAL : joel-ribis
O. Kaitasov
  • Function : Author
V.A. Borodin
  • Function : Author
M. Descoins
  • Function : Author

Abstract

This paper reports the feasibility of nano-oxide precipitate formation in Fe-Cr alloy by ion implantation synthesis. High contents of Al+ and O+ ions were implanted into thin films of high purity Fe-10%Cr alloy at room temperature and were studied by transmission electron microscopy (TEM) and atom probe tomography (APT). In contrast, to the common two-stage implantation/annealing scheme of precipitate ensemble synthesis by ion beams, cluster formation took place at the implantation stage in our study, requiring no subsequent high-temperature annealing. The post-implantation microstructural examination revealed in the as-implanted thin foil an array of precipitates with diameters in the range of 3-30 nm. The precipitate number density distribution was found to depend on the foil thickness. The precipitate enrichment with both Al and O was confirmed by the energy-filtered TEM analysis. Judging from the electron diffraction pattern and high-resolution TEM analysis, the crystal lattice of precipitates corresponds to some cubic modification of aluminium-rich oxide or pure aluminium oxide. The precipitate lattice alignment with the host matrix was revealed for at least a part of precipitates. The analysis of APT data using cluster detection algorithm indicates the presence of local zones enriched in Al and O, even in those areas of as-implanted samples where no clusters were visible by TEM.
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Dates and versions

in2p3-01079120 , version 1 (31-10-2014)

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C. Zheng, A. Gentils, J. Ribis, O. Kaitasov, V.A. Borodin, et al.. The feasibility of Al-based oxide precipitation in Fe-10%Cr alloy by ion implantation. Philosophical Magazine, 2014, 94 issue 25, pp.2937-2955. ⟨10.1080/14786435.2014.941028⟩. ⟨in2p3-01079120⟩
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