Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping
Résumé
We report on the synthesis of SiGe layers on silicon by gas immersion laser doping. GeCl(4) molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. Structural and chemical characterizations of the SiGe layers have been performed by using complementarily Rutherford backscattering spectrometry and x-ray Diffraction which indicate that Ge incorporation in the Si matrix results in a fully strained SiGe layer with gradual Ge concentrations reaching up to 18.5% near the surface. (C) 2008 American Institute of Physics.