Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%

J.C. Dupuy; G. Prudon; C. Dubois; R. Koegler; S. Akhmadaliev; A. Perrat-Mabilon

doi:10.1002/sia.5108

Journal Articles Surface and Interface Analysis Year : 2013

Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%

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J.C. Dupuy

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G. Prudon

Function : Author

C. Dubois

Function : Author

R. Koegler

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S. Akhmadaliev

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A. Perrat-Mabilon

Function : Author

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Accelerator Physics [physics.acc-ph]

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https://in2p3.hal.science/in2p3-00835579

Submitted on : Wednesday, June 19, 2013-10:24:37 AM

Last modification on : Thursday, April 11, 2024-1:18:12 PM

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in2p3-00835579 , version 1 (19-06-2013)

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HAL Id : in2p3-00835579 , version 1
DOI : 10.1002/sia.5108

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J.C. Dupuy, G. Prudon, C. Dubois, R. Koegler, S. Akhmadaliev, et al.. Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%. Surface and Interface Analysis, 2013, 45, pp.369-372. ⟨10.1002/sia.5108⟩. ⟨in2p3-00835579⟩

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%

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