Thermal Oxidation of Sintered Silicon Carbide Used for Diesel Particulate Filter Walls - IN2P3 - Institut national de physique nucléaire et de physique des particules
Article Dans Une Revue Journal of Ceramic Science and Technology Année : 2012

Thermal Oxidation of Sintered Silicon Carbide Used for Diesel Particulate Filter Walls

T. Thomé
  • Fonction : Auteur
M. Capelle
  • Fonction : Auteur
L. Thomé
  • Fonction : Auteur
T. Prenant
  • Fonction : Auteur
M. Néret
  • Fonction : Auteur

Résumé

The temperature dependence of the thermal oxidation of sintered silicon carbide (SiC) used for diesel particulate filter walls (DPF) is investigated. Silicon carbide samples are heated at temperatures between 770 K and 1470 K for different annealing times to study the effect of both the temperature and the duration on the oxidation kinetics. The thickness and composition of the oxide layers are characterized by means of XPS and RBS. Silicon oxycarbides (SiCxOy) are first formed and then silicon dioxide (SiO2) appears above 770 K. Different types of SiO2 layers can be identified. The compounds obtained depend on thermal oxidation conditions.
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Dates et versions

in2p3-00752933 , version 1 (16-11-2012)

Identifiants

Citer

T. Thomé, M. Capelle, L. Thomé, T. Prenant, M. Néret. Thermal Oxidation of Sintered Silicon Carbide Used for Diesel Particulate Filter Walls. Journal of Ceramic Science and Technology, 2012, 3, pp.89-94. ⟨10.4416/JCST2012-00006⟩. ⟨in2p3-00752933⟩
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