Nanocavities induced by neon Plasma Based Ion Implantation in silicon
Abstract
Nanocavities formed by neon Plasma Based Ion Implantation (PBII) in Si have been studied in comparison with conventional ion implantation (CI). Interstitial-type defects are also investigated. To avoid amorphisation, neon implantations were performed at 250 °C with a fluence of ≈5 × 1016 cm−2. Using PBII a rather uniform layer of cavities is observed from the surface while a three layer structure is present using the CI. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. After annealing at 800 °C, bubbles grow and extended defects identified as {1 1 3} defects are formed.