Modification of SiO2 by Kr and Xe implantations - IN2P3 - Institut national de physique nucléaire et de physique des particules
Conference Papers Year : 2009
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in2p3-00724656 , version 1 (22-08-2012)

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  • HAL Id : in2p3-00724656 , version 1

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E. Oliviero, M. O. Ruault, O. Kaïtasov, F. Fortuna, E. Ntsoenzok. Modification of SiO2 by Kr and Xe implantations. First Workshop on the Use of in situ TEM / Ion Accelerator Techniques in the Study of Radiation Damage in Solids, Jun 2008, Stanford, United States. pp.74-80. ⟨in2p3-00724656⟩
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