Conference Papers
Year : 2009
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https://in2p3.hal.science/in2p3-00724656
Submitted on : Wednesday, August 22, 2012-11:05:54 AM
Last modification on : Thursday, April 11, 2024-1:18:12 PM
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- HAL Id : in2p3-00724656 , version 1
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E. Oliviero, M. O. Ruault, O. Kaïtasov, F. Fortuna, E. Ntsoenzok. Modification of SiO2 by Kr and Xe implantations. First Workshop on the Use of in situ TEM / Ion Accelerator Techniques in the Study of Radiation Damage in Solids, Jun 2008, Stanford, United States. pp.74-80. ⟨in2p3-00724656⟩
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