Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate

E. Oliviero; B. Décamps; M.-O. Ruault

Conference Papers Year : 2011

Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate

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1

E. Oliviero

Function : Author
PersonId : 740755
IdHAL : erwanoliviero
ORCID : 0000-0002-7828-9137
IdRef : 060657928

CSNSM PS1

B. Décamps

Function : Author
PersonId : 738389
IdHAL : brigitte-decamps
ORCID : 0000-0002-2168-980X
IdRef : 061094072

CSNSM PS1

M.-O. Ruault

Function : Author

CSNSM PS1

Domains

Materials Science [cond-mat.mtrl-sci]

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https://in2p3.hal.science/in2p3-00703743

Submitted on : Monday, June 4, 2012-11:52:19 AM

Last modification on : Thursday, April 11, 2024-1:18:12 PM

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in2p3-00703743 , version 1 (04-06-2012)

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HAL Id : in2p3-00703743 , version 1

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E. Oliviero, B. Décamps, M.-O. Ruault. Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate. Indo-French conference on Nano-Structuring by Ion Beams, 2009, Bhubaneswar, India. pp.173-180. ⟨in2p3-00703743⟩

Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate

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