Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali; N. Plank; J. Galipaud; B.J. Ruck; H. J. Trodahl; F. Semond; S. Sorieul; L. Hirsch

doi:10.1016/j.jcrysgro.2010.09.030

Journal Articles Journal of Crystal Growth Year : 2010

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

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1
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F. Natali

Function : Author

N. Plank

Function : Author

J. Galipaud

Function : Author

B.J. Ruck

Function : Author

H. J. Trodahl

Function : Author

F. Semond

Function : Author

Centre de recherche sur l'hétéroepitaxie et ses applications

S. Sorieul

Function : Author

Centre d'Etudes Nucléaires de Bordeaux Gradignan

L. Hirsch

Function : Author

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Instrumentation and Detectors [physics.ins-det]

Virginie Mas : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00585159

Submitted on : Monday, April 11, 2011-10:52:33 PM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00585159 , version 1 (11-04-2011)

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HAL Id : in2p3-00585159 , version 1
DOI : 10.1016/j.jcrysgro.2010.09.030

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F. Natali, N. Plank, J. Galipaud, B.J. Ruck, H. J. Trodahl, et al.. Epitaxial growth of GdN on silicon substrate using an AlN buffer layer. Journal of Crystal Growth, 2010, 312, pp.3583-3587. ⟨10.1016/j.jcrysgro.2010.09.030⟩. ⟨in2p3-00585159⟩

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Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

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