Epitaxial growth of GdN on silicon substrate using an AlN buffer layer - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Journal of Crystal Growth Year : 2010

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali
  • Function : Author
N. Plank
  • Function : Author
J. Galipaud
  • Function : Author
B.J. Ruck
  • Function : Author
H. J. Trodahl
  • Function : Author
L. Hirsch
  • Function : Author

Dates and versions

in2p3-00585159 , version 1 (11-04-2011)

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F. Natali, N. Plank, J. Galipaud, B.J. Ruck, H. J. Trodahl, et al.. Epitaxial growth of GdN on silicon substrate using an AlN buffer layer. Journal of Crystal Growth, 2010, 312, pp.3583-3587. ⟨10.1016/j.jcrysgro.2010.09.030⟩. ⟨in2p3-00585159⟩
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