Conference Papers Year : 2006

Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL

D. Prêle
  • Function : Author
G. Sou
  • Function : Author
G. Klisnick
M. Redon
  • Function : Author
E. Bréelle
  • Function : Author
  • PersonId : 1380717
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Dates and versions

in2p3-00196815 , version 1 (13-12-2007)

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  • HAL Id : in2p3-00196815 , version 1

Cite

D. Prêle, G. Sou, G. Klisnick, M. Redon, E. Bréelle, et al.. Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL. 13th IEEE International Conference on Electronics, Circuits and Systems, ICECS-2006, Dec 2006, Nice, France. pp.525-528. ⟨in2p3-00196815⟩
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