Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Applied Physics Letters Year : 1987

Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing

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in2p3-00019460 , version 1 (31-05-2001)

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  • HAL Id : in2p3-00019460 , version 1

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W.-O. Adekoya, J.C. Muller, P. Siffert. Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing. Applied Physics Letters, 1987, 50, pp.1240-1242. ⟨in2p3-00019460⟩
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