Thermal annealing effects on grain boundary recombination activity in silicon

A. Barhdadi; H. Amzil; J.C. Muller; P. Siffert

Journal Articles Applied physics. A, Materials science & processing Year : 1989

Thermal annealing effects on grain boundary recombination activity in silicon

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1

A. Barhdadi

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H. Amzil

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J.C. Muller

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Institut de Recherches Subatomiques

P. Siffert

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Institut de Recherches Subatomiques

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Submitted on : Wednesday, May 30, 2001-1:36:28 PM

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in2p3-00019451 , version 1 (30-05-2001)

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A. Barhdadi, H. Amzil, J.C. Muller, P. Siffert. Thermal annealing effects on grain boundary recombination activity in silicon. Applied physics. A, Materials science & processing, 1989, 49, pp.233-237. ⟨in2p3-00019451⟩

Thermal annealing effects on grain boundary recombination activity in silicon

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