Low energy boron implantation profiles in silicon from junction depth measurements

P. Sebillotte; M. Badanoiu; V.B. Ndocko-Ndongue; P. Siffert

Journal Articles Radiation Effects Year : 1971

Low energy boron implantation profiles in silicon from junction depth measurements

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1

P. Sebillotte

Function : Author

M. Badanoiu

Function : Author

V.B. Ndocko-Ndongue

Function : Author

Institut de Recherches Subatomiques

P. Siffert

Function : Author

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Nuclear Experiment [nucl-ex]

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https://in2p3.hal.science/in2p3-00018479

Submitted on : Friday, December 22, 2000-9:45:54 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00018479 , version 1 (22-12-2000)

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HAL Id : in2p3-00018479 , version 1

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P. Sebillotte, M. Badanoiu, V.B. Ndocko-Ndongue, P. Siffert. Low energy boron implantation profiles in silicon from junction depth measurements. Radiation Effects, 1971, 7, pp.7-15. ⟨in2p3-00018479⟩

Low energy boron implantation profiles in silicon from junction depth measurements

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