Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments)

R. Stuck; J.P. Ponpon; R. Berger; P. Siffert

Journal Articles Radiation Effects Year : 1973

Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments)

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1

R. Stuck

Function : Author

Institut de Recherches Subatomiques

J.P. Ponpon

Function : Author

Institut de Recherches Subatomiques

R. Berger

Function : Author

P. Siffert

Function : Author

Institut de Recherches Subatomiques

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Instrumentation and Detectors [physics.ins-det]

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https://in2p3.hal.science/in2p3-00018454

Submitted on : Thursday, December 21, 2000-9:28:16 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00018454 , version 1 (21-12-2000)

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HAL Id : in2p3-00018454 , version 1

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R. Stuck, J.P. Ponpon, R. Berger, P. Siffert. Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments). Radiation Effects, 1973, 20, pp.75-80. ⟨in2p3-00018454⟩

Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments)

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