Journal Articles
Nuclear Instruments and Methods
Year : 1979
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https://in2p3.hal.science/in2p3-00017970
Submitted on : Friday, November 3, 2000-8:13:20 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00017970 , version 1
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M. Hage-Ali, P. Siffert. Compound semiconductors surface characterization by high resolution Rutherford backscattering. Nuclear Instruments and Methods, 1979, 166, pp.411-418. ⟨in2p3-00017970⟩
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