Article Dans Une Revue Nuclear Instruments and Methods Année : 1979

Compound semiconductors surface characterization by high resolution Rutherford backscattering

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in2p3-00017970 , version 1 (03-11-2000)

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  • HAL Id : in2p3-00017970 , version 1

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M. Hage-Ali, P. Siffert. Compound semiconductors surface characterization by high resolution Rutherford backscattering. Nuclear Instruments and Methods, 1979, 166, pp.411-418. ⟨in2p3-00017970⟩
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