Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the $<110>$ axis - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Physics Letters B Year : 1988

Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the $<110>$ axis

E. Bak
  • Function : Author
D. Barderis
  • Function : Author
T.J. Brodbeck
  • Function : Author
A.T. Doyle
  • Function : Author
R.J. Ellison
  • Function : Author
K. Elserner
  • Function : Author
R.E. Hugues-Jones
  • Function : Author
S.D. Kolya
  • Function : Author
D. Mercer
  • Function : Author
S.P. Moller
  • Function : Author
D. Newton
  • Function : Author
P.J. Ottewell
  • Function : Author
J.B.B. Petersen
  • Function : Author
A.H. Sorensen
  • Function : Author
R.J. Thompson
  • Function : Author
E. Uggerhoj
  • Function : Author
G.W. Wilson
  • Function : Author
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Dates and versions

in2p3-00017464 , version 1 (26-09-2000)

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  • HAL Id : in2p3-00017464 , version 1

Cite

E. Bak, D. Barderis, T.J. Brodbeck, A.T. Doyle, R.J. Ellison, et al.. Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the $<110>$ axis. Physics Letters B, 1988, 213, pp.242. ⟨in2p3-00017464⟩
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