Journal Articles
Journal of Applied Physics
Year : 1988
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https://in2p3.hal.science/in2p3-00017459
Submitted on : Tuesday, September 26, 2000-3:50:09 PM
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- HAL Id : in2p3-00017459 , version 1
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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon. Journal of Applied Physics, 1988, 64, pp.666. ⟨in2p3-00017459⟩
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