Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films

G. Bolbach; R. Beavis; S. Della Negra; C. Deprun; W. Ens; Y. Lebeyec; D.E. Main; B. Schueler; K.G. Standing

Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1988

Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films

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1

G. Bolbach

Function : Author

R. Beavis

Function : Author

S. Della Negra

Function : Author

Institut de Physique Nucléaire d'Orsay

C. Deprun

Function : Author

Institut de Physique Nucléaire d'Orsay

W. Ens

Function : Author

Y. Lebeyec

Function : Author

Institut de Physique Nucléaire d'Orsay

D.E. Main

Function : Author

B. Schueler

Function : Author

K.G. Standing

Function : Author

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Nuclear Experiment [nucl-ex]

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https://in2p3.hal.science/in2p3-00016565

Submitted on : Friday, August 25, 2000-3:05:56 PM

Last modification on : Monday, September 23, 2024-9:22:24 AM

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in2p3-00016565 , version 1 (25-08-2000)

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HAL Id : in2p3-00016565 , version 1

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G. Bolbach, R. Beavis, S. Della Negra, C. Deprun, W. Ens, et al.. Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988, 30, pp.74-82. ⟨in2p3-00016565⟩

Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films

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