Journal Articles
Applied Physics Letters
Year : 1989
Yvette Heyd : Connect in order to contact the contributor
https://in2p3.hal.science/in2p3-00016214
Submitted on : Tuesday, July 4, 2000-10:32:11 AM
Last modification on : Wednesday, April 24, 2024-11:28:54 AM
Dates and versions
Identifiers
- HAL Id : in2p3-00016214 , version 1
Cite
A. Goltzene, B. Meyer, C. Schwab. Persistent photquenching and anion antisite defects in neutron-irradiated GaAs. Applied Physics Letters, 1989, 54, pp.907. ⟨in2p3-00016214⟩
Collections
5
View
0
Download