Journal Articles Journal of Applied Physics Year : 1989

Electrically active defects in silicon after excimer laser processing

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in2p3-00016212 , version 1 (04-07-2000)

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  • HAL Id : in2p3-00016212 , version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, 1989, 66, pp.3934. ⟨in2p3-00016212⟩
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