Journal Articles
Journal of Applied Physics
Year : 1989
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https://in2p3.hal.science/in2p3-00016212
Submitted on : Tuesday, July 4, 2000-10:20:37 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00016212 , version 1
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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, 1989, 66, pp.3934. ⟨in2p3-00016212⟩
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