Journal Articles
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Year : 1990
Yvette Heyd : Connect in order to contact the contributor
https://in2p3.hal.science/in2p3-00016047
Submitted on : Wednesday, June 7, 2000-9:04:24 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
Dates and versions
Identifiers
- HAL Id : in2p3-00016047 , version 1
Cite
E. Christophel, T. Benchiguer, A. Goltzene, C. Schwab, Guangyou Wang, et al.. EPR evidence for As interstitial-related defects in semi-insulating GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1990, 42, pp.3461. ⟨in2p3-00016047⟩
Collections
11
View
0
Download