Charge transfer as an alternative to metastability of defects in semi-insulating GaAs - IN2P3 - Institut national de physique nucléaire et de physique des particules
Journal Articles Japanese Journal of Applied Physics Year : 1990

Charge transfer as an alternative to metastability of defects in semi-insulating GaAs

T. Benchiguer
  • Function : Author
Institut de Recherches Subatomiques
E. Christophel
  • Function : Author
Institut de Recherches Subatomiques
A. Goltzene
  • Function : Author
Institut de Recherches Subatomiques
B. Mari
B. Meyer
  • Function : Author
C. Schwab
  • Function : Author
Institut de Recherches Subatomiques

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https://in2p3.hal.science/in2p3-00016042

Submitted on : Wednesday, June 7, 2000-8:28:06 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00016042 , version 1 (07-06-2000)

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  • HAL Id : in2p3-00016042 , version 1

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T. Benchiguer, E. Christophel, A. Goltzene, B. Mari, B. Meyer, et al.. Charge transfer as an alternative to metastability of defects in semi-insulating GaAs. Japanese Journal of Applied Physics, 1990, 29, pp.L1569. ⟨in2p3-00016042⟩

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