Conference Papers
Physica E: Low-dimensional Systems and Nanostructures
Year : 2003
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https://in2p3.hal.science/in2p3-00013947
Submitted on : Thursday, August 21, 2003-11:54:11 AM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00013947 , version 1
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A. Hattab, F. Dufaye, F. Meyer, Yam Vy, Thanh Vinh Le, et al.. Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes. International Conference on Superlattices Nano-Structures and Nano-Devices ICSNN 2002, Jul 2002, Toulouse, France. pp.648-650. ⟨in2p3-00013947⟩
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