Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes - IN2P3 - Institut national de physique nucléaire et de physique des particules
Article Dans Une Revue Applied physics. A, Materials science & processing Année : 1986

Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes

Fichier non déposé

Dates et versions

in2p3-00006153 , version 1 (22-09-2000)

Identifiants

  • HAL Id : in2p3-00006153 , version 1

Citer

T. Zundel, E. Courcelle, A. Mesli, J.C. Muller, P. Siffert. Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes. Applied physics. A, Materials science & processing, 1986, 40. ⟨in2p3-00006153⟩
3 Consultations
0 Téléchargements

Partager

More