Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs

J. Mangeney; N. Stelmakh; A. Shen; J.M. Lourtioz; A. Alexandrou; J.P. Likforman; C. Clerc; V. Thierry-Mieg; E. Lugagne-Delpon; J.L. Oudar

Journal Articles Electronics Letters Year : 1998

Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs

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J. Mangeney

Function : Author
PersonId : 758005
ORCID : 0000-0002-4354-4257
IdRef : 085586137

N. Stelmakh

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A. Shen

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J.M. Lourtioz

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A. Alexandrou

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J.P. Likforman

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C. Clerc

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Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

V. Thierry-Mieg

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E. Lugagne-Delpon

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J.L. Oudar

Function : Author

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Instrumentation and Detectors [physics.ins-det]

Jocelyne Lorgeril : Connect in order to contact the contributor

https://in2p3.hal.science/in2p3-00003088

Submitted on : Friday, October 8, 1999-12:01:15 PM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00003088 , version 1 (08-10-1999)

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HAL Id : in2p3-00003088 , version 1

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J. Mangeney, N. Stelmakh, A. Shen, J.M. Lourtioz, A. Alexandrou, et al.. Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs. Electronics Letters, 1998, 34, pp.818-820. ⟨in2p3-00003088⟩

Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs

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