Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Electronics Letters Year : 1998

Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs

J. Mangeney
N. Stelmakh
  • Function : Author
A. Shen
  • Function : Author
J.M. Lourtioz
  • Function : Author
A. Alexandrou
  • Function : Author
J.P. Likforman
  • Function : Author
V. Thierry-Mieg
  • Function : Author
E. Lugagne-Delpon
  • Function : Author
J.L. Oudar
  • Function : Author
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Dates and versions

in2p3-00003088 , version 1 (08-10-1999)

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  • HAL Id : in2p3-00003088 , version 1

Cite

J. Mangeney, N. Stelmakh, A. Shen, J.M. Lourtioz, A. Alexandrou, et al.. Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs. Electronics Letters, 1998, 34, pp.818-820. ⟨in2p3-00003088⟩
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