Journal Articles
Electronics Letters
Year : 1998
Jocelyne Lorgeril : Connect in order to contact the contributor
https://in2p3.hal.science/in2p3-00003088
Submitted on : Friday, October 8, 1999-12:01:15 PM
Last modification on : Thursday, April 11, 2024-1:18:11 PM
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- HAL Id : in2p3-00003088 , version 1
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J. Mangeney, N. Stelmakh, A. Shen, J.M. Lourtioz, A. Alexandrou, et al.. Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au + ions into bulk GaAs. Electronics Letters, 1998, 34, pp.818-820. ⟨in2p3-00003088⟩
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