Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

J. Boulmer; A. Desmur-Larre; C. Guedj; D. Debarre; P. Boucaud; F.H. Julien; E. Finkman; R. Laval; J.B. Ozenne; H. Yang; D. Bouchier; C. Godet; I Cabarrocas P. Roca; G. Calvarin; C. Clerc

Conference Papers Year : 1995

Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

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1

J. Boulmer

Function : Author

A. Desmur-Larre

Function : Author

C. Guedj

Function : Author

D. Debarre

Function : Author

P. Boucaud

Function : Author
PersonId : 174456
IdHAL : philippe-boucaud
ORCID : 0000-0002-4192-9030
IdRef : 078860059

F.H. Julien

Function : Author

E. Finkman

Function : Author

R. Laval

Function : Author

J.B. Ozenne

Function : Author

H. Yang

Function : Author

D. Bouchier

Function : Author

C. Godet

Function : Author
PersonId : 496
IdHAL : christian-godet
IdRef : 032545134

CV

I Cabarrocas P. Roca

Function : Author

G. Calvarin

Function : Author

C. Clerc

Function : Author

Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

Domains

Instrumentation and Detectors [physics.ins-det]

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https://in2p3.hal.science/in2p3-00000644

Submitted on : Tuesday, March 2, 1999-11:11:17 AM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

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in2p3-00000644 , version 1 (02-03-1999)

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HAL Id : in2p3-00000644 , version 1

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J. Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, P. Boucaud, et al.. Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100). Laser-Induced Thin Film Processing, Feb 1995, San Jose, United States. pp.367-372. ⟨in2p3-00000644⟩

Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

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